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    電學特性

    更新時間:2023-03-28

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    電學特性

    FEOL Electrical Characterization
    In IC device manufacturing electrical characteristics of layers and films must be well controlled. Conventional contact test methods on monitor wafers, like the 4-point probe FSM offers, do no longer meet modern requirements. State of the art IC feature extremely thin, often only a few atomic layers of material. FSM's contactless RsL probe for sheet resistance and leakage as well as the non-destructive EOT probe for IC-CV measurements meet the challenge to characterize ultra shallow junctions and thin dielectric materials on production wafers.

    FSM offers contact and non-contact electrical characterization metrology used in FEOL device making.

    3DIC TSV and BWS TTV矽片表麵形貌測量
    Film Stress薄膜應力量測儀
    FEOL Electrical Characterization 電學特性
    Thin wafer metrology 晶圓測量學
    Film Adhesion漆膜附著力測試

    FSM offers contact and non-contact electrical characterization metrology used in FEOL device making.

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